NovuSiC® MOSFET Officially Released

2023-05-04

1200V 12mΩ NovuSiC® MOSFET has been mass-produced, and the average yield of the first batch of mass production is 80%.

NovuSiC® MOSFET Officially Released

2023-03-27

Novusem rolled out NovuSiC® MOSFET (G1) and announced the mass production schedule of G2.

"Power for the Future"- Novusem's SiC New Product Launch Event end successfully

2022-07-04

Novusem held a product launch to debut NovuSiC® EJBS™ and the Silicon-based MCR® diode series.

Novusem Signs Long-term Strategic Cooperation Agreement with Taiwan's Episil

2023-03-27

Episil will provide Novusem with access to its SiC process platform, giving top priority to Novusem's OEM products.

UESTC establishes an engineering practice education base at Novusem

2023-03-27

the School of Integrated Circuit Science and Engineering of UESTC and Novusem signed the Talent Strategic Cooperation Agreement.

Novusem Certified as a High-tech Enterprise

2023-03-27

Novusem has been successfully certified as a high-tech enterprise in 2022, which is both an honor and a motivational force.

New Office, New Image: Novusem Officially Moves into its New Home

2023-03-27

At the end of 2022, the new office project of Novusem was officially delivered and a move-in ceremony was held.

Novusem’s Pre-A round of financing complete successfully NovuSiC MOSFET will be unveiled at the end

2022-08-18

Novusem—the high-tech enterprise focusing on the design and development of SiC power devices, completed Pre-A round of financing.

Forward inrush current of over 12 times the rated current！A breakthrough in local automotive-grade S

2022-10-18

The mass-produced NovuSiC® EJBS™ has a forward inrush current of over 12 times the rated current.